Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
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چکیده
Manuscript received January 21, 1999. Manuscript revised April 9, 1999. † The authors are with the High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation, Itami-shi, 6648641 Japan. †† The authors are with the Department of Physics and Electronics, College of Engineering, Osaka Prefecture University, Sakai-shi, 599-8531 Japan. a) E-mail: [email protected] IEICE TR NS. ELECTRON., VOL. E82-C, NO. 10 OCTOBE 1999
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تاریخ انتشار 1999